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savantic semiconductor product specification silicon npn power transistors 2SD1788 d escription with ito-220 package switching power transistor darlington pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 100 v v ceo collector-emitter voltage open base 100 v v ebo emitter-base voltage open collector 7 v i c collector current 4 a i cm collector current-peak 6 a i b base current 0.3 a i bm base current-peak 0.5 a p t total power dissipation t c =25 25 w t j junction temperature 150 t stg storage temperature -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 5.0 /w fig.1 simplified outline (ito-220) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SD1788 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v cesat collector-emitter saturation voltage i c =1a; i b =2ma 1.5 v v besat base-emitter saturation voltage i c =1a; i b =2ma 2.0 v i cbo collector cut-off current v cb =100v; i e =0 0.1 ma i ceo collector cut-off current v ce =100v; i b =0 0.1 ma i ebo emitter cut-off current v eb =7v; i c =0 5 ma h fe dc current gain i c =1a ; v ce =3v 1500 30000 f t transition frequency i c =0.4a ; v ce =10v 20 mhz switching times t on turn-on time 2.0 s t s storage time 12 s t f fall time i c =1a;i b1 =i b2 =2ma, r l =25 b ;v bb2 =4v 5.0 s
savantic semiconductor product specification 3 silicon npn power transistors 2SD1788 package outline fig.2 outline dimensions (unindicated tolerance:0.20 mm)

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